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SQ4401DY
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TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
1.8
I D = 10.5 A
V GS = 10 V
- 40
- 42
I D = 1 mA
1.5
- 44
1.2
- 46
0.9
- 48
0.6
- 50
- 50
- 25
0 25 50 75 100
125
150
- 50
- 25
0 25 50 75 100
125
150
100
10
1
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
T J = 150 °C
T J - Junction Temperature (°C)
Breakdown Voltage BVDSS vs. Junction Temperature
0.10
0.08
0.06
0.1
0.01
0.001
T J = 25 °C
0.04
0.02
0.00
T J = 125 °C
T J = 25 °C
0.0
0.2
0.4 0.6 0.8 1.0
1.2
0
2 4 6 8
10
V S D - S ource-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
V GS - G ate-to- S ource Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.8
0.6
I D = 250 μA
0.4
I D = 1 mA
0.2
0.0
- 0.2
- 0.4
- 50
- 25
0
25 50 75 100
125
150
T J - Temperature (°C)
Threshold Voltage
S11-2109 Rev. D, 31-Oct-11
4
Document Number: 68908
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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